Image sensor module and method of manufacturing the same

ABSTRACT

An image sensor module includes a semiconductor chip. Photodiode units are disposed in an active region of the semiconductor chip to convert light into electric signals. Pads are disposed in a peripheral region formed around the active region and the pads are electrically connected to the photodiode units. A connecting region is formed around the peripheral region. Re-distribution layers are electrically connected to respective pads and extend to the connecting region. A transparent substrate covers the photodiode units and the pads and exposes at least a portion of the re-distribution layers. Connecting layers are electrically connected to the respective re-distribution layers and extend to a top surface of the transparent substrate. Connecting members are connected to the respective connecting layers disposed on the top surface of the transparent substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent applicationnumber 10-2008-0098755 filed on Oct. 8, 2008, which is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates generally to an image sensor module and amethod of manufacturing the same, and more particularly to an imagesensor module having a reduced size.

An image sensor module is a device that converts an analog opticalsignal into an electric signal.

The image sensor module generally includes a semiconductor chip havingimage sensors formed on an upper surface thereof, a glass substrateattached on the bottom surface of the semiconductor chip, aninterconnection extending to the bottom surface of the glass substratealong a side surface of the glass substrate from the top surface of thesemiconductor chip, and a connecting member connected to theinterconnection.

The image sensors include photodiodes that receive incident light andgenerate photocharges corresponding to the amount of the incident light,driving units that output electric signals corresponding to photochargesgenerated from the respective photodiodes, color filters disposed on therespective photodiodes, and a lens unit disposed on the respective colorfilters.

In a conventional image sensor module, a connecting member is disposedat the position opposite to the top surface of a semiconductor chip,onto which light is incident. The connecting member is electricallyconnected to an external circuit substrate and the like.

However, configuring the image sensor module conventionally anddisposing the connecting member at the position opposite to the topsurface of the semiconductor chip, the size of the image sensor moduleis considerably increased. Further, it is difficult apply theconventional image sensor module to the structure in which a circuitsubstrate is disposed at the position opposite to the top surface of asemiconductor chip.

SUMMARY OF THE INVENTION

Embodiments of the present invention include an image sensor modulehaving a reduced size by modifying its structure, and a method ofmanufacturing the same.

In one embodiment, an image sensor module comprises a semiconductor chipcomprising photodiode units disposed in an active region to convertlight into electric signals, pads disposed in a peripheral region formedaround the active region and electrically connected to the photodiodeunits, and a connecting region formed around the peripheral region;re-distribution layers electrically connected to the respective pads andextended to the connecting region; a transparent substrate covering thephotodiode units and the pads, and exposing at least portions of there-distribution layers; connecting layers electrically connected to therespective re-distribution layers and extended to a top surface of thetransparent substrate; and connecting members connected to therespective connecting layers disposed on the top surface of thetransparent substrate.

Each of the photodiode units comprises a photodiode converting lightinto electric signals, a driving unit having a driving transistordriving the photodiode, a color filter disposed on the photodiode, and acondensing member disposed on the color filter.

The transparent substrate includes any one of a transparent glasssubstrate, a transparent quartz substrate and a transparent syntheticresin substrate.

The angle made by the top surface of the transparent substrate and aside surface connected to the top surface of the transparent substrateis an obtuse angle.

The image sensor module further comprises a transparent adhesion memberinterposed between the transparent substrate and the semiconductor chip.

The image sensor module further comprises at least one lens unitdisposed at a portion of the top surface of the transparent substrate,corresponding to the active region.

The image sensor module further comprises a circuit substrate having anopening exposing the active region and connecting pads disposed aroundthe opening and electrically connected to the respective connectingmembers.

The image sensor module further comprises a holder surrounding thesemiconductor chip and the circuit substrate, and having an openingexposing the opening of the circuit substrate.

The transparent substrate comprises a first transparent substrateportion corresponding to the active region and a second transparentsubstrate portion corresponding to the peripheral region, and the firsttransparent substrate portion has a first thickness and the secondtransparent substrate portion has a second thickness lower than thefirst thickness.

In another embodiment, an image sensor module comprises a semiconductorchip comprising photodiode units disposed in an active region to convertlight into electric signals, and pads disposed in a peripheral regionformed around the active region and electrically connected to thephotodiode units; a transparent substrate comprising a transparentsubstrate body covering the photodiode units and the pads and havingthrough-holes exposing at least portions of the pads, andthrough-electrodes electrically connected to the respective pads exposedthrough the through-holes; and connection members connected to therespective through-electrodes.

The transparent substrate includes any one of a transparent glasssubstrate, a transparent quartz substrate and a transparent syntheticresin substrate.

The image sensor module further comprises a transparent adhesion memberinterposed between the transparent substrate and the semiconductor chip.

The image sensor module further comprises at least one lens unitdisposed at a portion of a top surface of the transparent substrate,corresponding to the active region.

The image sensor module further comprises a circuit substrate having anopening exposing the active region and connecting pads disposed aroundthe opening and electrically connected to the respective connectingmembers.

The image sensor module further comprises a holder surrounding thesemiconductor chip and the circuit substrate, and having an openingexposing the opening of the circuit substrate.

The transparent substrate comprises a first transparent substrateportion corresponding to the active region and a second transparentsubstrate portion corresponding to the peripheral region, and the firsttransparent substrate portion has a first thickness and the secondtransparent substrate portion has a second thickness lower than thefirst thickness.

In still another embodiment, a method of manufacturing an image sensormodule comprises forming first and second photodiode units convertinglight into electric signals in first and second active regions of firstand second semiconductor chips disposed at both sides of a scriberegion, respectively, and forming first and second pads electricallyconnected to the first and second photodiode units in first and secondperipheral regions formed around the first and second active regions,respectively; forming connecting layers electrically connecting thefirst and second pads while crossing the scribe region; covering thefirst and second photodiode units, the first and second pads and theconnecting layers with a transparent substrate; etching the transparentsubstrate to expose the connecting layers corresponding to the scriberegion; forming re-distribution layers having one ends electricallyconnected to the respective connecting layers and the other endsopposite to the one ends, extended to a top surface of the transparentsubstrate opposite to the first and second pads; and individualizing thefirst and second semiconductor chips along the scribe region.

The first and second pads are formed opposite to each other at bothsides of the scribe region.

The covering with the transparent substrate further comprises coating atransparent adhesion member between the transparent substrate and thesemiconductor chip.

In the exposing of the connecting layers, an obtuse angle is made by anangle made by a side surface of the transparent substrate connected tothe exposed connecting layer and the top surface of the transparentsubstrate.

After forming the re-distribution layers, the method further comprisesforming an organic layer having an opening covering the connectinglayers and the re-distribution layers and exposing portions of there-distribution layers.

The method further comprises attaching connecting members on therespective re-distribution layers exposed by the opening.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of an image sensor module in accordancewith an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a photodiode unit shown in an activeregion.

FIG. 3 is a cross-sectional view of an image sensor module in accordancewith another embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a circuit substrate and aholder, combined with the image sensor module of FIG. 3.

FIG. 5 is a cross-sectional view of an image sensor module in accordancewith still another embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a circuit substrate and aholder, combined with the image sensor module of FIG. 5.

FIGS. 7 through 11 are cross-sectional views showing a method ofmanufacturing an image sensor module in accordance with an embodiment ofthe present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

FIG. 1 is a cross-sectional view of an image sensor module in accordancewith an embodiment of the present invention.

Referring to FIG. 1, the image sensor module 100 comprises asemiconductor chip 110, re-distribution layers 120, a transparentsubstrate 130, connecting layers 140, and connecting members 150.

The semiconductor chip 110 may be defined by six substantially planarsurfaces, for example the semiconductor chip 110 may have a rectangularparallelepiped shape. The semiconductor chip 110 having a rectangularparallelepiped shape includes a top surface 111 and a bottom surface 112opposite the top surface 111.

An active region AR, a peripheral region PR and a connecting region CRare formed on the top surface 111 of the semiconductor chip 110.

The active region AR is formed at a central portion of the top surface111 of the semiconductor chip 110. The peripheral region PR is formed ina band shape around the active region AR. The connecting region CR isformed in a band shape around the peripheral region PR.

FIG. 2 is a cross-sectional view of a photodiode unit shown in an activeregion.

Photodiode units 113 are disposed in the active region AR. Thephotodiode units 113 comprise photodiodes 114, driving units (notshown), a planarization layer 115, color filters 116, and lens units117.

A plurality of photodiodes 114 are disposed in a matrix form (i.e., anA×B array) within the active region AR. For example, when the resolutionof the image sensor module 100 is 1,024×768, 1,024×768×3 photodiodes 114are disposed in a matrix form.

The driving units are electrically connected to the respectivephotodiodes 114 disposed in the active region AR. For example, thedriving units may include a plurality of driving transistors.

The planarization layer 115 covers the photodiodes 114 disposed in theactive region AR. For example, the planarization layer 115 may includean organic layer.

The color filters 116 are disposed on the planarization layer 115. Thecolor filters 116 comprise red, green, and blue color filters. Whitelight is filtered into red light by a red color filter. White light isfiltered into green light by a green color filter. White light isfiltered into blue light by a blue color filter. The red, green, andblue color filters are alternately disposed on the respectivephotodiodes 114.

Pads 118, shown in FIG. 1), are disposed in the peripheral region PR.For example, the pads 118 may be symmetrically disposed on both sides ofthe peripheral region PR. The pads 118 are electrically connected to thephotodiode units 113.

When viewed from above, the re-distribution layers 120 have a lineshape. An end of each of the re-distribution layers 120 is electricallyconnected to a pad 118, respectively. An opposite end of each of there-distribution layers 120 is extended to the connecting region CR. Inthe present embodiment, the re-distribution layer 120 may include amaterial having excellent conductivity, for example copper.

The transparent substrate 130 covers the photodiode units 113, disposedin the active region AR, and the pads 118, disposed in the peripheralregion PR. For example, the transparent substrate may be any one of atransparent glass substrate, a transparent quartz substrate, and atransparent synthetic resin substrate.

The transparent substrate 130 has a plurality of side surfaces includingside surfaces extending to the re-distribution layers 120 are defined asinclined side surfaces. The angle θ made by each of the inclined sidesurfaces and the top surface of the transparent substrate 130 may be,for example, an obtuse angle.

An adhesion member 125 is interposed between the transparent substrate130 and the semiconductor chip 110. The adhesion member 125 may includea transparent adhesive material. In this embodiment, the adhesion member125 may be a transparent epoxy adhesive. In the present embodiment, theadhesion member 125 covers the photodiode units 113, disposed in theactive region AR of the semiconductor chip 110, and the pads 118,disposed in the peripheral region PR. Therefore, portions of there-distribution layers 120, extending to the connecting region CR, areexposed from the adhesion member 125.

When viewed from above, the connecting layers 140 have a line shape. Anend of each of the connecting layers 140 is electrically connected to aportion of a respective re-distribution layer 120 disposed in theconnecting region CR. The opposite end of each of the connecting layers140 is extended to the top surface of the transparent substrate 130along the inclined side surface of the transparent substrate 130. A landportion (not shown) having the shape of a disk may be formed at theopposite end of each of the connecting layers 140. The connecting member150 is attached on the disk-shaped land portion.

The image sensor module 100 may further include a resist pattern 145.The resist pattern 145 is formed in both the peripheral region PR andthe connecting region CR, but is not formed in the active region AR. Theresist pattern 145 covers the connecting layers 140 disposed in theperipheral region PR and the connecting region CR, and the resistpattern 145 has an opening through which the land portion is exposed.

The connecting member 150 is electrically connected to the land portionformed at the opposite end of each of the connecting layers 140 on thetop surface of the transparent substrate 130. In this embodiment, theconnecting member 150 may be a conductive ball including a metal with alow melting point, such as solder. As should be understood, according tothe present invention the connecting member 150 may alternatively have aplate shape rather than a spherical shape discussed above.

FIG. 3 is a cross-sectional view of an image sensor module in accordancewith another embodiment of the present invention. The image sensormodule according to the present embodiment of has a configurationsubstantially identical to the image sensor module described withreference to FIGS. 1 and 2, with the exception of a transparentsubstrate and a lens unit. Therefore, descriptions of the samecomponents will be omitted, and like elements are designated by likereference numerals.

Referring to FIG. 3, the image sensor module 100 comprises asemiconductor chip 110, re-distribution layers 120, a transparentsubstrate 130, connecting layers 140, connecting members 150, and a lensunit 160.

The transparent substrate 130 is disposed on an active region AR and aperipheral regions PR of the semiconductor chip 110, and the transparentsubstrate 130 comprises a first transparent substrate portion 132 and asecond transparent substrate portion 134.

In this embodiment, the first transparent substrate portion 132 isdisposed at the position corresponding to the peripheral region PR, andthe second transparent substrate portion 134 is disposed at the positioncorresponding to the active region AR.

The first transparent substrate portion 132 has a first thickness T1when measured from the bottom surface of the transparent substrate 130.The second transparent substrate portion 134 has a second thickness T2that is thicker than the thickness T1 when measured from the bottomsurface of the transparent substrate 130. In the present embodiment, thethickness T2 of the second transparent substrate portion 134 isdetermined by a focus length of the lens unit 160 which will bedescribed later.

The connecting layer 140 is disposed on the first transparent substrateportion 132 of the transparent substrate 130. The connecting member 150is disposed on the connecting layer 140 disposed on the firsttransparent substrate portion 132. In this embodiment, the connectingmember 150 has a first height, measured from the top surface of theconnecting layer 140, that is less than a second height H2 of the secondtransparent substrate portion 134, which is measured from the top of thefirst transparent substrate portion 132. If the first height H1 of theconnecting member 150 is less than the second height H2 of the secondtransparent substrate portion 134, a circuit substrate does not protrudefrom the second transparent substrate portion 134, the volume andthickness of the image sensor module 100 can be decreased.

The lens unit 160 is disposed on the second transparent substrateportion 134 of the transparent substrate 130. In this embodiment, thelens unit 160 may comprise at least one lens (not shown). In the presentembodiment, the lens may be a convex lens, a concave lens, or the like.

FIG. 4 is a cross-sectional view showing a circuit substrate and aholder combined with the image sensor module of FIG. 3.

Referring to FIG. 4, the image sensor module 100 may further comprise acircuit substrate 170 and a holder 180.

According to the present embodiment, the circuit substrate 170 has aplate shape. The circuit substrate 170 has an opening through which theactive region AR of the semiconductor chip 110 is exposed. The circuitsubstrate 170 comprises connecting pads 175 disposed at positionscorresponding to respective connecting members 150. The connecting pads175 of the circuit substrate 170 are electrically connected to therespective connecting members 150. In present embodiment, the connectingmember 150 is disposed at a lower position than that of the secondtransparent substrate portion 134 of the transparent substrate 130,therefore the circuit substrate 170 is not protruded from the secondtransparent substrate portion 134 of the transparent substrate 130, andthe volume and thickness of the image sensor module 100 can bedecreased.

The holder 180 surrounds the semiconductor chip 110, the transparentsubstrate 130, and the circuit substrate 170. The holder 180 has anopening through which the active region AR of the semiconductor chip 110is exposed. A step through which the holder 180 is combined with thelens unit 160 is formed in an inner side surface of the holder 180,formed by the opening of the holder 180. As the holder 180 is combinedwith the lens unit 160, it is possible to prevent foreign matter, suchas a foreign particles, from coming into the holder 180.

The image sensor module 100 may further comprise a protecting member 190covering the lens unit 160 exposed by the opening of the holder 180 soas to prevent the lens unit 160 exposed by the opening of the holder 180from being damaged.

FIG. 5 is a cross-sectional view of an image sensor module in accordancewith still another embodiment of the present invention.

Referring to FIG. 5, the image sensor module 200 comprises asemiconductor chip 210, a transparent substrate 230, through-electrodes240, and connecting members 250.

The semiconductor chip 210 is defined by six substantially planarsurfaces, for example the semiconductor chip 210 may have a rectangularparallelepiped shape. The semiconductor chip 210 having a rectangularparallelepiped shape has a top surface 211 and a bottom surface 212opposite the top surface 211.

An active region AR and a peripheral region PR are formed on the topsurface 211 of the semiconductor chip 210.

The active region AR is formed at a central portion of the top surface211 of the semiconductor chip 210. The peripheral region PR is formed ina band shape around the active region AR.

Photodiode units 213 are disposed in the active region AR. Thephotodiode units 213 comprise photodiodes, driving units, aplanarization layer, color filters, and lens units, as shown in FIG. 2.

Pads 218 are disposed in the peripheral region PR. For example, the pads218 may be symmetrically disposed in the peripheral region PR about thephotodiode units 213. The pads 218 are electrically connected to thephotodiode units 213.

The transparent substrate 230 covers both the photodiode units 213disposed in the active region AR and the pads 218 disposed in theperipheral region PR. For example, the transparent substrate may includeany one of a transparent glass substrate, a transparent quartzsubstrate, and a transparent synthetic resin substrate. In thisembodiment, the transparent substrate 230 may have a plate shape havingthe same shape and size as those of the semiconductor chip 210.

The transparent substrate 230 has through-holes 231 which exposerespective pads 218 disposed on the peripheral region PR of thesemiconductor chip 210.

An adhesion member 225 is interposed between the transparent substrate230, which includes the through-holes 231, and the semiconductor chip210. The adhesion member 225 may include a transparent adhesivematerial. In the present embodiment, the adhesion member 225 may be atransparent epoxy adhesive. In the present embodiment, the adhesionmember 225 covers the active regions AR and the peripheral regions PR ofthe semiconductor chip 210. The adhesion member 225 has openings whichexpose the respective pads 218.

The through-electrode 240 is formed in the through-hole 231 of thetransparent substrate 230. The through-holes 240 are electricallyconnected to respective pads 218 of the semiconductor chip 210.

By way of example, the through-electrode 240 may be a conductive pin ora plating layer. For example, the through-electrode 240 may includecopper. A land portion 245 may be formed at each of the through-holes240 and disposed on the top surface of the transparent substrate 230.

The connecting member 250 is electrically connected to the land portion245 formed on the top surface of the transparent substrate 230. In thisembodiment, the connecting member 250 may be a conductive plate.Alternatively, the connecting member 250 may have a spherical shaperather than a plate shape, and may include a metal with a low meltingpoint, such as solder.

The lens units 260 may be disposed on the top surface of the transparentsubstrate 230. The lens unit 260 increases the amount of light incidentonto the photodiode units 213 or optical distribution. The lens unit 260includes one or more lenses and the lens unit 260 may be a convex lensor a concave lens.

In this embodiment, the transparent substrate 230 may have a plateshape. Alternatively, the transparent substrate 230 may have a firstthickness in the peripheral region PR and a second thickness greaterthan the first thickness in the active region AR, similar to theembodiment described with reference to FIG. 3. When the transparentsubstrate 230 is formed to be thick in the active region AR, a focusdistance between the lens unit 260 and the photodiode unit 213 can beprecisely adjusted.

FIG. 6 is a cross-sectional view showing a circuit substrate and aholder combined with the image sensor module of FIG. 5.

Referring to FIG. 6, the image sensor module 200 may further comprise acircuit substrate 270 and a holder 280.

The circuit substrate 270 has a plate shape. The circuit substrate 270has an opening exposing the active region AR of the semiconductor chip210. The circuit substrate 270 comprises connecting pads 275 disposed atpositions corresponding to respective connecting members 250. Theconnecting pads 275 of the circuit substrate 270 are electricallyconnected to the connecting members 250, respectively.

The holder 280 surrounds the semiconductor chip 210, the transparentsubstrate 230, and the circuit substrate 270. The holder 280 has anopening which exposes the active region AR of the semiconductor chip210.

FIGS. 7 through 11 are cross-sectional views showing a method ofmanufacturing an image sensor module in accordance with an embodiment ofthe present invention.

Referring to FIG. 7, first and second photodiode units 113 a and 113 bfor converting light into electric signals are formed in first andsecond active regions AR1 and AR2 of first and second semiconductorchips 110 a and 110 b disposed at both sides of a scribe region SR of awafer, respectively.

Subsequently, first and second pads 118 a and 118 b that areelectrically connected to the first and second photodiode units 113 aand 113 b are formed in first and second peripheral regions PR1 and PR2disposed around the first and second active regions AR1 and AR2,respectively. In this embodiment, the first and second pads 118 a and118 b are disposed opposite each other at both sides of the scriberegion SR.

The first photodiode unit 113 a is formed in the first active region AR1and the second photodiode unit 113 b is formed in the second activeregion AR2. Each of the first and second photodiode units 113 a and 113b comprises photodiodes, driving units driving the photodiodes, aplanarization layer covering the top surface, of the photodiode, colorfilters disposed on the planarization layer, and a micro-lenses disposedon the respective color filters.

Referring to FIG. 8, preliminary connecting layers 120 a connecting thefirst and second pads 118 a and 118 b disposed at both sides of thescribe region SR are formed to have a line shape. In this embodiment,the preliminary connecting layer 120 a may be formed through aphotolithography process or a plating process.

Referring to FIG. 9, after the preliminary connecting layers 120 aelectrically connecting the first and second pads 118 a and 118 b areformed, a transparent adhesion member 125 is formed on the first andsecond semiconductor chips 110 a and 110 b covering the first and secondphotodiode units 113 a and 113 b.

After the transparent adhesion member 125 is formed on the first andsecond semiconductor chips 110 a and 110 b, a transparent substrate 130is disposed on the adhesion member 125.

In this embodiment, the transparent substrate 130 may have a plateshape. For example, the transparent substrate 130 may be any one of atransparent glass substrate, a transparent quartz substrate, and atransparent synthetic resin substrate. As an alternative to the plateshape, the transparent substrate 130 may comprise a first transparentsubstrate portion having a first thickness and a second transparentsubstrate portion having a second thickness which is greater than thefirst thickness. The first transparent substrate portion may be formedat a position corresponding to the scribe region SR, and the secondtransparent substrate portion may be formed on the first and secondactive regions AR1 and AR2.

Referring to FIG. 10, after the transparent substrate 130 is attached onthe first and second semiconductor chips 110 a and 110 b, portionscorresponding to the scribe region SR in the transparent substrate 130and the adhesion members 125 are etched through an etching process. Forexample, the transparent substrate 130 and the adhesion members 125 maybe etched through a wet or dry etching process using an etchant. As thetransparent substrate 130 and the adhesion members 125 corresponding tothe scribe region SR are etched, the preliminary connecting layers 120a, disposed in the scribe region SR, are exposed from the transparentsubstrate 130 and the adhesion members 125.

For example, side surfaces of the etched transparent substrate 130 areformed to be inclined with respect to the top surface of the transparentsubstrate 130. For example, in the present embodiment, the angle made bya side surface of the transparent substrate 130 and the top surface ofthe transparent substrate 130 may be an obtuse angle.

Referring to FIG. 11, after the transparent substrate 130 is etched,first and second re-distribution layers 140 a and 140 b are formed andhave a line shape. An end of each of the first and secondre-distribution layers 140 a and 140 b is electrically connected to arespective preliminary connecting layer 120 a. The opposite end of eachof the first and second re-distribution layers 140 a and 140 b isextended to the top surface of the transparent substrate 130 along theinclined side surface of the transparent substrate 130. The first andsecond re-distribution layers 140 a and 140 b may be formed, forexample, through a photolithography process or a plating process.

After the first and second re-distribution layers 140 a and 140 b areformed, an organic layer 145 is formed on the resulting structure so asto cover a portion corresponding to the scribe region SR, i.e., the sidesurfaces of the transparent substrate 130. The organic layer 145 coversportions of the first and second re-distribution layers 140 a and 140 bdisposed on the top surface of the transparent substrate 130.

First and second connecting members 150 a and 150 b are formed on thefirst and second re-distribution layers 140 a and 140 b exposed by theorganic layer 145, respectively. For example, the first and secondconnecting members 150 a and 150 b may include a metal having a lowmelting point, such as solder.

After the first and second connecting members 150 a and 150 b are formedon the first and second re-distribution layers 140 a and 140 b,respectively, the scribe region SR is cut, thereby defining andsubstantially completing the manufacture of first and second imagesensor modules having the first and second semiconductor chips 110 a and110 b, respectively.

A circuit substrate and a holder may be additionally combined with thefirst and second image sensor modules.

As described above, connecting members are disposed on a transparentsubstrate having photodiode units formed thereon, so that the size of animage sensor module can be decreased, and the image sensor module can beapplied to various types of devices.

Although specific embodiments of the present invention have beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and the spirit of theinvention as disclosed in the accompanying claims.

1. An image sensor module, comprising: a semiconductor chip comprising:photodiode units disposed in an active region converting light intoelectric signals; pads disposed in a peripheral region formed around theactive region and electrically connected to the photodiode units; and aconnecting region formed around the peripheral region; re-distributionlayers electrically connected to the pads and extended to the connectingregion; a transparent substrate covering the photodiode units and thepads, wherein at least a portion of each of the re-distribution layersis exposed from the transparent substrate; connecting layerselectrically connected to the re-distribution layers and extended to atop surface of the transparent substrate; and connecting memberselectrically connected to the connecting layers disposed on the topsurface of the transparent substrate.
 2. The image sensor moduleaccording to claim 1, wherein each of the photodiode units comprises: aphotodiode converting light into electric signals; a driving unit havinga driving transistor driving the photodiode; a color filter disposedover the photodiode; and a condensing member disposed over the colorfilter.
 3. The image sensor module according to claim 1, wherein thetransparent substrate includes any one of a transparent glass substrate,a transparent quartz substrate, and a transparent synthetic resinsubstrate.
 4. The image sensor module according to claim 1, wherein anangle made by the top surface of the transparent substrate and a sidesurface connected to the top surface of the transparent substrate is anobtuse angle.
 5. The image sensor module according to claim 1, furthercomprising a transparent adhesion member interposed between thetransparent substrate and the semiconductor chip.
 6. The image sensormodule according to claim 1, further comprising at least one lens unitdisposed at a portion of the top surface of the transparent substratecorresponding to the active region.
 7. The image sensor module accordingto claim 1, further comprising a circuit substrate, the circuitsubstrate comprising: a first opening exposing the active region; andconnecting pads disposed around the first opening wherein the connectingpads are electrically connected to a connecting member of the connectingmembers.
 8. The image sensor module according to claim 7, furthercomprising a holder surrounding the semiconductor chip and the circuitsubstrate, wherein the holder includes a second opening exposing thefirst opening of the circuit substrate.
 9. The image sensor moduleaccording to claim 1, wherein the transparent substrate comprises: afirst transparent substrate portion corresponding to the active region,the first transparent substrate portion having a first thickness; and asecond transparent substrate portion corresponding to the peripheralregion, the second transparent substrate portion having a secondthickness, wherein the first thickness is greater than the secondthickness.
 10. An image sensor module, comprising: a semiconductor chipcomprising: photodiode units disposed in an active region convertinglight into electric signals; and pads disposed in a peripheral regionformed around the active region and electrically connected to thephotodiode units; a transparent substrate comprising: a firsttransparent substrate portion corresponding to the active region, thefirst transparent substrate portion having a first thickness; a secondtransparent substrate portion corresponding to the peripheral region,the first transparent substrate portion having a first thickness,wherein the first thickness is greater than the second thickness; atransparent substrate body covering the photodiode units and the padsand having through-holes exposing at least a portion of each of thepads; through-electrodes electrically connected to the pads exposedthrough the through-holes; and connection members connected to thethrough-electrodes, respectively.
 11. The image sensor module accordingto claim 10, wherein the transparent substrate includes any one of atransparent glass substrate, a transparent quartz substrate, and atransparent synthetic resin substrate.
 12. The image sensor moduleaccording to claim 10, further comprising a transparent adhesion memberinterposed between the transparent substrate and the semiconductor chip.13. The image sensor module according to claim 10, further comprising atleast one lens unit disposed at a portion of a top surface of thetransparent substrate corresponding to the active region.
 14. The imagesensor module according to claim 10, further comprising a circuitsubstrate comprising: a first opening exposing the active region; andconnecting pads disposed around the first opening, wherein theconnecting pads are electrically connected to the connecting members.15. The image sensor module according to claim 14, further comprising aholder surrounding the semiconductor chip and the circuit substrate,wherein the holder includes a second opening exposing the first openingof the circuit substrate.